{ital p}-type ion-implantation doping of Al{sub 0.75}Ga{sub 0.25}Sb with Be, C, Mg, and Zn

Journal Article · Thu Feb 01 00:00:00 EST 1996 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.361034· OSTI ID:277184

Zolper, J C; Klem, J F; Howard, A J; Hafich, M J ^[1]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185-0603 (United States)

{ital p}-type ion-implantation doping of Al{sub 0.75}Ga{sub 0.25}Sb is reported. The surface morphology and electrical properties of Al{sub 0.75}Ga{sub 0.25}Sb are shown by atomic force microscopy and Hall measurements to be degraded after rapid thermal annealing of 650{degree}C. Implantation of Be and Mg results in sheet hole concentrations twice that of the implanted acceptor dose of 1{times}10{sup 13} cm{sup {minus}2} following a 600{degree}C anneal. This is explained in terms of double acceptor or antisite defect formation. Implanted C acts as an acceptor but also demonstrates excess hole conduction attributed to implantation-induced defects. Implanted Zn requires higher annealing temperatures than Be and Mg to achieve 100{percent} effective activation for a dose of 1{times}10{sup 13} cm{sup {minus}2} probably as a result of more implantation-induced damage created from the heavier Zn ion. Secondary ion mass spectroscopy of as-implanted and annealed Be, Mg, and C samples are presented. Diffusion of implanted Be (5{times}10{sup 13} cm{sup {minus}2}, 45 keV) is shown to have an inverse dependence on temperature that is attributed to a substitutional-interstitial diffusion mechanism. Implanted Mg (1{times}10{sup 14} cm{sup {minus}2}, 110 keV) shows dramatic redistribution and loss at the surface of up to 56{percent} after a 600{degree}C anneal. Implanted C (2.5{times}10{sup 14} cm{sup {minus}2}, 70 keV) displays no redistribution even after a 650{degree}C anneal. This work lays the foundation for using ion-implantation doping in high performance AlGaSb/InGaSb-based {ital p}-channel field-effect transistors.

• Research Organization: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 277184
• Journal Information: Journal of Applied Physics, Vol. 79, Issue 3; Other Information: PBD: Feb 1996
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM COMPOUNDS
ION IMPLANTATION
GALLIUM ANTIMONIDES
MAGNESIUM ADDITIONS
ANNEALING
BERYLLIUM ADDITIONS
CARBON ADDITIONS
CRYSTAL DEFECTS
CRYSTAL DOPING
DIFFUSION
ELECTRIC CONDUCTIVITY
FIELD EFFECT TRANSISTORS
MANGANESE ADDITIONS
ZINC ADDITIONS
ALUMINIUM ANTIMONIDES
SURFACE STRUCTURE