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Title: Method of forming a leak proof plasma sprayed interconnection layer on an electrode of an electrochemical cell

Patent ·
OSTI ID:27707

A dense, substantially gas-tight, electrically conductive interconnection layer is formed on an electrode structure of an electrochemical cell by: (A) providing an electrode structure; (B) forming on a selected portion of the electrode surface, an interconnection layer having the general formula La{sub 1{minus}x}M{sub x}Cr{sub 1{minus}y}N{sub y}O{sub 3}, where M is a dopant selected from the group of Ca, Sr, Ba, and mixtures thereof, and where N is a dopant selected from the group of Mg, Co, Ni, Al, and mixtures thereof, and where x and y are each independently about 0.075--0.25, by thermally spraying, preferably plasma arc spraying, a flux added interconnection spray powder, preferably agglomerated, the flux added powder comprising flux particles, preferably including dopant, preferably (CaO){sub 12}(Al{sub 2}O{sub 3}){sub 7} flux particles including Ca and Al dopant, and LaCrO{sub 3} interconnection particles, preferably undoped LaCrO{sub 3}, to form a dense and substantially gas-tight interconnection material bonded to the electrode structure by a single plasma spraying step; and (C) heat treating the interconnection layer at from about 1,200 to 1,350 C to further densify and heal the micro-cracks and macro-cracks of the thermally sprayed interconnection layer. The result is a substantially gas-tight, highly doped, electrically conductive interconnection material bonded to the electrode structure. The electrode structure can be an air electrode, and a solid electrolyte layer can be applied to the unselected portion of the air electrode, and further a fuel electrode can be applied to the solid electrolyte, to form an electrochemical cell for generation of electrical power. 4 figs.

Research Organization:
Westinghouse Electric Corporation
DOE Contract Number:
FC21-91MC28055
Assignee:
Westinghouse Electric Corp., Pittsburgh, PA (United States)
Patent Number(s):
US 5,391,440/A/
Application Number:
PAN: 8-195,335
OSTI ID:
27707
Resource Relation:
Other Information: PBD: 21 Feb 1995
Country of Publication:
United States
Language:
English