Reactive ion etching-induced damage in AlAs/InGaAs heterostructure field-effect transistors processed in HBR plasma
- Univ. of Illinois, Urbana, IL (United States); and others
An investigation of the effects of HBr reactive ion etching (RIE) processing for gate recessing in lattice-matched InAlAl/InGaAs heterostructure field-effect transitors (HFETs) has been conducted. The effect of varying the Schottky barrier layer thickness on device performance and the susceptibility of HFETs to RIE-induced damage are presented for barrier layer thicknesses ranging from 10 to 25 nm. The effect of plasma self-bias voltage during gate recess etching on overall device performance for a given layer is assessed through direct current (dc) characterization and transconductance, threshold voltage, reverse gate leakage current, and gate-drain breakdown voltage, and through microwave characterization of the devices. Devices with barrier layers less than 20 nm thick are found to suffer the most degradation due to the RIE-induced damage. For devices with sufficiently thick barrier layers, dc and microwave device parameters compare well with those of corresponding devices fabricated using a selective wet-etch process. 10 refs., 5 figs., 1 tab.
- OSTI ID:
- 263457
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Vol. 12, Issue 6; Other Information: PBD: Nov-Dec 1994
- Country of Publication:
- United States
- Language:
- English
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