Interconnect modeling using integrated time-domain and frequency-domain techniques
Conference
·
OSTI ID:249920
- Fairfield Research Center, Santa Clara, CA (United States)
This paper presents an integrated time- and-frequency-domain technique for characterization and modeling of parasitic effects associated with interconnects. This technique enables direct measurements of critical transient as well as frequency responses of interconnects; accurate and efficient SPICE model extraction for coupled lines; and cross-domain verification of the measured data as well as the extracted models. To illustrate its application this technique is applied to characterize and extract the equivalent circuit model of the I/O bus on a real-world printed circuit board.
- OSTI ID:
- 249920
- Report Number(s):
- CONF-9511143-; TRN: 96:002071-0003
- Resource Relation:
- Conference: IEEE WESCON conference, San Francisco, CA (United States), 8 Nov 1995; Other Information: PBD: 1995; Related Information: Is Part Of Wescon/95; PB: 793 p.
- Country of Publication:
- United States
- Language:
- English
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