Direct Simulation Monte Carlo (DSMC) of rarefied gas flow during etching of large diameter (300-mm) wafers
- Univ. of Houston, TX (United States)
- Sandia National Labs., Albuquerque, NM (United States)
As microelectronic devices are scaled down to enhance functionality and speed, wafer size increases to accommodate the larger dice and improve throughput. For example, the wafer diameter is projected to increase from the current 200 to 300 mm by the year 2001. Uniform deposition and etching of thin films over these large diameter wafers is of major concern to the microelectronics industry. Also, flat panel display and solar conversion technologies require uniform processing over large area substrates. Computer simulation can provide valuable insight concerning the physicochemical processes occurring in the reactor and can be used as a guide to new reactor designs that deliver uniform etching or deposition. Strong density gradients of a gas species can be sustained even at very low pressures when the reaction probability of that species is high. Under these conditions, inlet gas arrangements are very important to reaction uniformity.
- OSTI ID:
- 244950
- Journal Information:
- IEEE Transactions on Plasma Science, Vol. 24, Issue 1; Other Information: PBD: Feb 1996
- Country of Publication:
- United States
- Language:
- English
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