Sputter deposition of cubic boron nitride films
- Fraunhofer-Institut fuer Schicht- und Oberflaechentechnik, Braunschweig (France)
Cubic boron nitride (c-BN) films can be prepared by sputter deposition. Targets, mostly hexagonal boron nitride (h-BN) or boron, which have low electrical conductivities, will be used. For the application of effective and reliable d.c. magnetron sputter techniques, conducting target materials are necessary. Boron carbide (B{sub 4}C) was proven to be a suitable candidate. A d.c. magnetron sputter process was developed in three phases. At first a r.f. diode sputter process was optimized for a h-BN target and transferred to a B{sub 4}C target, followed by d.c. magnetron sputtering experiments with the boron carbide target. Correlations between process parameters and film properties as well as some structural features of the sputter deposited films will be reported.
- OSTI ID:
- 230165
- Report Number(s):
- CONF-950840-; CNN: Contract 03M2101A6; TRN: 96:000433-0167
- Resource Relation:
- Conference: International conference on applications of diamond films and related materials, Gaithersburg, MD (United States), 21-24 Aug 1995; Other Information: PBD: 1995; Related Information: Is Part Of Applications of diamond films and related materials: Third international conference; Feldman, A.; Yarbrough, W.A.; Murakawa, Masao; Tzeng, Yonhua; Yoshikawa, Masanori [eds.]; PB: 973 p.
- Country of Publication:
- United States
- Language:
- English
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