Temperature & stress issues in devices with diamond substrates during manufacturing and operation
- Univ. of Arkansas, Fayetteville, AR (United States)
Finite element thermal and stress analyses were performed on a backside attached GaAs laser diode with a CVD diamond substrate. Two situations were one corresponding to thermal conditions during manufacture and the other to thermal conditions while operating. The influence of different solder coverage areas and voids in the solder layer on the maximum temperature and stress in the diode were determined. The results show that the stresses in the diode decrease and the maximum temperature increases when the area of the solder layer with respect to the die area decreases from the edges towards the center. It was also found that voids in the solder layer do not significantly increase the maximum temperature in the diode.
- OSTI ID:
- 230105
- Report Number(s):
- CONF-950840-; TRN: 96:000433-0105
- Resource Relation:
- Conference: International conference on applications of diamond films and related materials, Gaithersburg, MD (United States), 21-24 Aug 1995; Other Information: PBD: 1995; Related Information: Is Part Of Applications of diamond films and related materials: Third international conference; Feldman, A.; Yarbrough, W.A.; Murakawa, Masao; Tzeng, Yonhua; Yoshikawa, Masanori [eds.]; PB: 973 p.
- Country of Publication:
- United States
- Language:
- English
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