Seeding with purified ultrafine diamond particles for diamond synthesis by CVD
Conference
·
OSTI ID:230066
- Osaka Univ. (Japan); and others
Si substrates were seeded with purified nanocrystal diamond particles about 5 nm in diameter synthesized by the implosion process. Ultra high growing particle densities of diamond more than 5x10{sup 11}cm{sup {minus}2} achieved and continuous diamond films were formed uniformly in 10 min after deposition started by using conventional microwave plasma chemical vapor deposition (CVD) method. Well-faceted diamond films have been fabricated at 200{degrees}C on the Si substrate by the magneto-active microwave plasma CVD method.
- OSTI ID:
- 230066
- Report Number(s):
- CONF-950840-; TRN: 96:000433-0066
- Resource Relation:
- Conference: International conference on applications of diamond films and related materials, Gaithersburg, MD (United States), 21-24 Aug 1995; Other Information: PBD: 1995; Related Information: Is Part Of Applications of diamond films and related materials: Third international conference; Feldman, A.; Yarbrough, W.A.; Murakawa, Masao; Tzeng, Yonhua; Yoshikawa, Masanori [eds.]; PB: 973 p.
- Country of Publication:
- United States
- Language:
- English
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