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Title: Growth of oriented rare-earth-transition-metal thin films

Growth of oriented rare-earth-transition-metal thin films Rare-earth-transition-metal thin films are successfully grown by magnetron sputtering onto single-crystal MgO substrates with epitaxial W buffer layers. The use of epitaxial W buffer layers allows oriented single-phase films to be grown. Sm-Co films grown onto W(100), have strong in-plane anisotropy and coercivities exceeding 5 T at 5 K whereas Fe-Sm films have strong perpendicular anisotropy and are magnetically soft.
Authors: ; ; ;
Publication Date:
OSTI Identifier:OSTI ID: 226426
Report Number(s):ANL/MSD/CP--88691; CONF-960425--4
ON: DE96009042; TRN: 96:002824
DOE Contract Number:W-31109-ENG-38
Resource Type:Conference
Resource Relation:Conference: 1996 IEEE international magnetics conference, Seattle, WA (United States), 9-12 Apr 1996; Other Information: PBD: 1996
Research Org:Argonne National Lab., IL (United States)
Sponsoring Org:USDOE, Washington, DC (United States)
Country of Publication:United States
Language:English
Subject: 36 MATERIALS SCIENCE; COBALT ALLOYS; MAGNETIC PROPERTIES; CRYSTAL STRUCTURE; SAMARIUM ALLOYS; NEODYMIUM ALLOYS; IRON ALLOYS; ANISOTROPY; LAYERS; THIN FILMS; TUNGSTEN; CRYSTAL GROWTH; LATTICE PARAMETERS; MAGNESIUM OXIDES; SUBSTRATES