Near-infrared photodetectors utilizing MoS{sub 2}-based heterojunctions

Journal Article · Tue Jul 28 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4927749· OSTI ID:22499250

Park, Min Ji; Min, Jung Ki; Yi, Sum-Gyun; Kim, Joo Hyoung; Yoo, Kyung-Hwa ^[1]; Oh, Jeseung ^[2]

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1. Department of Physics, Yonsei University, Seoul 120-749 (Korea, Republic of)
2. ProteomeTech Inc., Seoul 120-749 (Korea, Republic of)

Near-infrared photodetectors are developed using graphene/MoS{sub 2} and WSe{sub 2}/MoS{sub 2} vertical heterojunctions. These heterojunctions exhibit diode-rectifying behavior in the dark and enhanced photocurrent upon near-infrared irradiation. The photocurrent increases with increasing near-infrared power, leading to the photoresponsibility of 0.14 and 0.3 A W{sup −1} for the graphene/MoS{sub 2} and WSe{sub 2}/MoS{sub 2} heterojunctions, respectively, which are much higher than the photoresponsibility reported for a multilayer MoS{sub 2} phototransistor.

• OSTI ID: 22499250
• Journal Information: Journal of Applied Physics, Vol. 118, Issue 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
GRAPHENE
HETEROJUNCTIONS
MOLYBDENUM SULFIDES
NEAR INFRARED RADIATION
PHOTODETECTORS
TUNGSTEN SELENIDES