Improvement in J{sub c} performance below liquid nitrogen temperature for SmBa{sub 2}Cu{sub 3}O{sub y} superconducting films with BaHfO{sub 3} nano-rods controlled by low-temperature growth
- Department of Energy Engineering and Science, Nagoya University, Nagoya 464-8603 (Japan)
- Department of Materials Science and Engineering, Kyushu Institute of Technology, Kitakyushu 804-8550 (Japan)
- Electric Power Engineering Research Laboratory, Central Research Institute of Electric Power Industry, Yokosuka, Kanagawa 240-0196 (Japan)
- Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan)
For use in high-magnetic-field coil-based applications, the critical current density (J{sub c}) of REBa{sub 2}Cu{sub 3}O{sub y} (REBCO, where RE = rare earth) coated conductors must be isotropically improved, with respect to the direction of the magnetic field; these improvements must be realized at the operating conditions of these applications. In this study, improvement of the J{sub c} for various applied directions of magnetic field was achieved by controlling the morphology of the BaHfO{sub 3} (BHO) nano-rods in a SmBCO film. We fabricated the 3.0 vol. % BHO-doped SmBCO film at a low growth temperature of 720 °C, by using a seed layer technique (T{sub s} = 720 °C film). The low-temperature growth resulted in a morphological change in the BHO nano-rods. In fact, a high number density of (3.1 ± 0.1) × 10{sup 3} μm{sup −2} of small (diameter: 4 ± 1 nm), discontinuous nano-rods that grew in various directions, was obtained. In J{sub c} measurements, the J{sub c} of the T{sub s} = 720 °C film in all directions of the applied magnetic field was higher than that of the non-doped SmBCO film. The J{sub c}{sup min} (6.4 MA/cm{sup 2}) of the former was more than 6 times higher than that (1.0 MA/cm{sup 2}) of the latter at 40 K, under 3 T. The aforementioned results indicated that the discontinuous BHO nano-rods, which occurred with a high number density, exerted a 3D-like flux pinning at the measurement conditions considered. Moreover, at 4.2 K and under 17 T, a flux pinning force density of 1.6 TN/m{sup 3} was realized; this value was comparable to the highest value recorded, to date.
- OSTI ID:
- 22499244
- Journal Information:
- APL Materials, Vol. 4, Issue 1; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2166-532X
- Country of Publication:
- United States
- Language:
- English
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