Photoluminescence study of high density Si quantum dots with Ge core

Journal Article · Thu Jan 21 00:00:00 EST 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4940348· OSTI ID:22494922

Makihara, K.; Ikeda, M.; Miyazaki, S. ^[1]

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1. Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

Si quantum dots (Si-QDs) with Ge core were self-assembled on thermally grown SiO{sub 2} from alternate thermal decomposition of pure SiH{sub 4} and GeH{sub 4} diluted with He. When the sample was excited by the 979 nm line of a semiconductor laser, fairly broad photoluminescence (PL) spectra in the region of 0.6–0.8 eV were observed at room temperature. The observed PL spectra suggested that radiative recombination of photo-generated carriers through quantized states of Ge core is the dominant pathway for the emission from the dots, reflecting the type II energy band discontinuity between the Si clad and Ge core. We also found that P-δ doping to Ge core plays an important role in recombination through the quantized states in the valence band of Ge core and P donor levels.

• OSTI ID: 22494922
• Journal Information: Journal of Applied Physics, Vol. 119, Issue 3; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CARRIERS
EV RANGE
GERMANIUM HYDRIDES
PHOTOLUMINESCENCE
PYROLYSIS
QUANTUM DOTS
RECOMBINATION
SEMICONDUCTOR LASERS
SILANES
SILICA
SILICON OXIDES
SPECTRA
TEMPERATURE RANGE 0273-0400 K
VALENCE