Optical properties of single wurtzite/zinc-blende ZnSe nanowires grown at low temperature
Abstract
ZnSe nanowires with a dominant wurtzite structure have been grown at low temperature (300 °C) by molecular beam epitaxy assisted by solid Au nanoparticles. The nanowires emission is polarized perpendicularly to their axis in agreement with the wurtzite selection rules. Alternations of wurtzite and zinc-blende regions have been observed by transmission electron microscopy, and their impact on the nanowires optical properties has been studied by microphotoluminescence. The nanowires show a dominant intense near-band-edge emission as well as the ZnSe wurtzite free exciton line. A type II band alignment between zinc-blende and wurtzite ZnSe is evidenced by time-resolved photoluminescence. From this measurement, we deduce values for the conduction and valence band offsets of 98 and 50 meV, respectively.
- Authors:
-
- IOM-CNR Laboratorio TASC, S. S. 14, Km. 163.5, I-34149 Trieste (Italy)
- Univ. Grenoble Alpes, F-38000 Grenoble (France)
- IMEM-CNR, Parco Area delle Scienze 37/A, I-43010 Parma (Italy)
- Publication Date:
- OSTI Identifier:
- 22494842
- Resource Type:
- Journal Article
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 118; Journal Issue: 9; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 77 NANOSCIENCE AND NANOTECHNOLOGY; GOLD; MEV RANGE; MOLECULAR BEAM EPITAXY; NANOPARTICLES; NANOWIRES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SELECTION RULES; TEMPERATURE RANGE 0400-1000 K; TIME RESOLUTION; TRANSMISSION ELECTRON MICROSCOPY; ZINC SELENIDES; ZINC SULFIDES
Citation Formats
Zannier, V., Department of Physics, University of Trieste, Via Valerio 2, I-34127 Trieste, Cremel, T., Kheng, K., CEA, INAC-SP2M, « Nanophysique et Semiconducteurs » Group, F-38000 Grenoble, Artioli, A., Ferrand, D., CNRS, Institut Néel, « Nanophysique et Semiconducteurs » Group, F-38000 Grenoble, Grillo, V., S3 NANO-CNR, Via Campi 213/A, I-41125 Modena, and Rubini, S. Optical properties of single wurtzite/zinc-blende ZnSe nanowires grown at low temperature. United States: N. p., 2015.
Web. doi:10.1063/1.4929821.
Zannier, V., Department of Physics, University of Trieste, Via Valerio 2, I-34127 Trieste, Cremel, T., Kheng, K., CEA, INAC-SP2M, « Nanophysique et Semiconducteurs » Group, F-38000 Grenoble, Artioli, A., Ferrand, D., CNRS, Institut Néel, « Nanophysique et Semiconducteurs » Group, F-38000 Grenoble, Grillo, V., S3 NANO-CNR, Via Campi 213/A, I-41125 Modena, & Rubini, S. Optical properties of single wurtzite/zinc-blende ZnSe nanowires grown at low temperature. United States. https://doi.org/10.1063/1.4929821
Zannier, V., Department of Physics, University of Trieste, Via Valerio 2, I-34127 Trieste, Cremel, T., Kheng, K., CEA, INAC-SP2M, « Nanophysique et Semiconducteurs » Group, F-38000 Grenoble, Artioli, A., Ferrand, D., CNRS, Institut Néel, « Nanophysique et Semiconducteurs » Group, F-38000 Grenoble, Grillo, V., S3 NANO-CNR, Via Campi 213/A, I-41125 Modena, and Rubini, S. 2015.
"Optical properties of single wurtzite/zinc-blende ZnSe nanowires grown at low temperature". United States. https://doi.org/10.1063/1.4929821.
@article{osti_22494842,
title = {Optical properties of single wurtzite/zinc-blende ZnSe nanowires grown at low temperature},
author = {Zannier, V. and Department of Physics, University of Trieste, Via Valerio 2, I-34127 Trieste and Cremel, T. and Kheng, K. and CEA, INAC-SP2M, « Nanophysique et Semiconducteurs » Group, F-38000 Grenoble and Artioli, A. and Ferrand, D. and CNRS, Institut Néel, « Nanophysique et Semiconducteurs » Group, F-38000 Grenoble and Grillo, V. and S3 NANO-CNR, Via Campi 213/A, I-41125 Modena and Rubini, S.},
abstractNote = {ZnSe nanowires with a dominant wurtzite structure have been grown at low temperature (300 °C) by molecular beam epitaxy assisted by solid Au nanoparticles. The nanowires emission is polarized perpendicularly to their axis in agreement with the wurtzite selection rules. Alternations of wurtzite and zinc-blende regions have been observed by transmission electron microscopy, and their impact on the nanowires optical properties has been studied by microphotoluminescence. The nanowires show a dominant intense near-band-edge emission as well as the ZnSe wurtzite free exciton line. A type II band alignment between zinc-blende and wurtzite ZnSe is evidenced by time-resolved photoluminescence. From this measurement, we deduce values for the conduction and valence band offsets of 98 and 50 meV, respectively.},
doi = {10.1063/1.4929821},
url = {https://www.osti.gov/biblio/22494842},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 9,
volume = 118,
place = {United States},
year = {Mon Sep 07 00:00:00 EDT 2015},
month = {Mon Sep 07 00:00:00 EDT 2015}
}