Efficient far-infrared thermal bremsstrahlung radiation from a heterojunction bipolar transistor

Journal Article · Fri Aug 28 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4929500· OSTI ID:22494783

Chung, Pei-Kang; Yen, Shun-Tung ^[1]

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1. Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, 1001 Ta-Hsueh Road, Hsinchu, Taiwan (China)

We investigate the far-infrared thermal radiation properties of a heterojunction bipolar transistor. The device conveniently provides a high electric field for electrons to heat the lattice and the electron gas in a background with ions embedded. Because of very high effective temperature of the electron gas in the collector, the electron-ion bremsstrahlung makes efficient the thermal radiation in the far-infrared region. The transistor can yield a radiation power of 0.1 mW with the spectral region between 2 and 75 THz and a power conversion efficiency of 6 × 10{sup −4}. Such output contains a power of 20 μW in the low-frequency part (2–20 THz) of the spectrum.

• OSTI ID: 22494783
• Journal Information: Journal of Applied Physics, Vol. 118, Issue 8; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
BREMSSTRAHLUNG
ELECTRIC FIELDS
ELECTRON GAS
ELECTRONS
ENERGY CONVERSION
ENERGY EFFICIENCY
FAR INFRARED RADIATION
HETEROJUNCTIONS
IONS
THERMAL RADIATION
THZ RANGE
TRANSISTORS