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Title: Photoluminescence study of p-type vs. n-type Ag-doped ZnO films

Silver doped ZnO films have been grown on sapphire (0001) substrates by pulsed laser deposition. Hall measurements indicate that p-type conductivity is realized for the films deposited at 500 °C and 750 °C. Transmission electron microscopy images show more obvious and higher density of stacking faults (SFs) present in the p-type ZnO films as compared to the n-type films. Top view and cross sectional photoluminescence of the n- and p-type samples revealed free excitonic emission from both films. A peak at 3.314 eV, attributed to SF emission, has been observed only for the n-type sample, while a weak neutral acceptor peak observed at 3.359 eV in the p-type film. The SF emission in the n-type sample suggests localization of acceptor impurities nearby the SFs, while lack of SF emission for the p-type sample indicates the activation of the Ag acceptors in ZnO.
Authors:
;  [1] ;  [2] ; ;  [3] ;  [1] ;  [4]
  1. Department of Electrical and Computer Engineering, Texas A&M University, College Station, Texas 77843-3128 (United States)
  2. Department of Physics, Chemistry and Biology, Linkoping University, 583 81 Linkoping (Sweden)
  3. Department of Materials Science and Engineering, Texas A&M University, College Station, Texas 77843-3003 (United States)
  4. (United States)
Publication Date:
OSTI Identifier:
22494739
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 6; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DOPED MATERIALS; ENERGY BEAM DEPOSITION; EV RANGE; HALL EFFECT; IMAGES; IMPURITIES; LASER RADIATION; N-TYPE CONDUCTORS; PHOTOLUMINESCENCE; P-TYPE CONDUCTORS; PULSED IRRADIATION; SAPPHIRE; SILVER; STACKING FAULTS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; ZINC OXIDES