Anomalous Hall effect in epitaxial ferrimagnetic anti-perovskite Mn{sub 4−x}Dy{sub x}N films
Anomalous Hall effect (AHE) has been studied for ferrimagnetic antiperovskite Mn{sub 4−x}Dy{sub x}N films grown by molecular-beam epitaxy. The introduction of Dy changes the AHE dramatically, even changes its sign, while the variations in magnetization are negligible. Two sign reversals of the AHE (negative-positive-negative) are ascribed to the variation of charge carriers as a result of Fermi surface reconstruction. We further demonstrate that the AHE current J{sub AH} is dissipationless (independent of the scattering rate), by confirming that anomalous Hall conductivity, σ{sub AH}, is proportional to the carrier density n at 5 K. Our study may provide a route to further utilize antiperovskite manganese nitrides in spintronics.
- OSTI ID:
- 22494689
- Journal Information:
- Journal of Applied Physics, Vol. 118, Issue 5; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Extrinsic anomalous Hall effect in epitaxial Mn{sub 4}N films
Prediction of a magnetic Weyl semimetal without spin-orbit coupling and strong anomalous Hall effect in the Heusler compensated ferrimagnet