Relationship between transport properties and band diagrams in InAs{sub x}Sb{sub 1−x}/Al{sub 0.1}In{sub 0.9}Sb quantum wells
- Department of Applied Physics, Fukuoka University, Jonan, Fukuoka 814-0180 (Japan)
- Department of Electrical Engineering, Tokyo University of Science, Yamaguchi, Sanyo-Onoda, Yamaguchi 756-0884 (Japan)
- Asahi Kasei Corporation, Fuji, Shizuoka 416-8501 (Japan)
- The Noguchi Institute, Itabashi, Tokyo 173-0003 (Japan)
The resistivity of InAs{sub 0.1}Sb{sub 0.9}/Al{sub 0.1}In{sub 0.9}Sb quantum wells (QWs) is much lower than that of InSb/Al{sub 0.1}In{sub 0.9}Sb QWs, staying low resistivity even at low temperature. Fundamental difference in low temperature transport properties between InSb/Al{sub 0.1}In{sub 0.9}Sb and InAs{sub 0.1}Sb{sub 0.9}/Al{sub 0.1}In{sub 0.9}Sb QWs was revealed, based on the band diagram calculations of these QWs. Band diagrams of InAs{sub x}Sb{sub 1−x}/Al{sub 0.1}In{sub 0.9}Sb QWs showed that the energy band of the InAs{sub x}Sb{sub 1−x} layer moves downward with increasing As content x. The QW is type I at x equal to 0, becomes type II at x equal to 0.1. The Fermi level (E{sub F}) of the InSb QWs lies in the band gap and below apart from the bottom of the conduction band, while E{sub F} of the InAs{sub 0.1}Sb{sub 0.9} QWs is above the bottom of the conduction band of the well. The calculated sheet carrier densities are in good agreement with the experimental results. It well explains that the sheet carrier density difference between InSb and InAs{sub 0.1}Sb{sub 0.9} QWs mainly originates from this band diagram difference and the position of E{sub F}.
- OSTI ID:
- 22493912
- Journal Information:
- AIP Advances, Vol. 5, Issue 6; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
- Country of Publication:
- United States
- Language:
- English
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