Radiation response of multi-quantum well solar cells: Electron-beam-induced current analysis

Journal Article · Mon Dec 28 00:00:00 EST 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4939067· OSTI ID:22493113

Scheiman, D. A.; Jenkins, P. P.; Walters, R. J. ^[1]; Lumb, M. P.; Hoheisel, R. ^[2]; Gonzalez, M. ^[3]; Messenger, S. R. ^[4]; Tibbits, T. N. D. ^[5]; Imaizumi, M. ^[6]; Ohshima, T.; Sato, S. I. ^[7]

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1. Naval Research Laboratory, Washington, DC 20375 (United States)
2. The George Washington University, Washington, DC 20052 (United States)
3. Sotera Defense Solutions, Herndon, Virginia 20171 (United States)
4. University of Maryland Baltimore County, Baltimore, Maryland 21250 (United States)
5. QuantaSol Ltd, Kingston-upon-Thames KT1 3GZ (United Kingdom)
6. Japan Aerospace Exploration Agency (JAXA), Tsukuba, Ibaraki 305-8505 (Japan)
7. Japan Atomic Energy Agency (JAEA), Takasaki, Gunma 370-1292 (Japan)

Solar cells utilizing multi-quantum well (MQW) structures are considered promising candidate materials for space applications. An open question is how well these structures can resist the impact of particle irradiation. The aim of this work is to provide feedback about the radiation response of In{sub 0.01}Ga{sub 0.99}As solar cells grown on Ge with MQWs incorporated within the i-region of the device. In particular, the local electronic transport properties of the MQW i-regions of solar cells subjected to electron and proton irradiation were evaluated experimentally using the electron beam induced current (EBIC) technique. The change in carrier collection distribution across the MQW i-region was analyzed using a 2D EBIC diffusion model in conjunction with numerical modeling of the electrical field distribution. Both experimental and simulated findings show carrier removal and type conversion from n- to p-type in MQW i-region at a displacement damage dose as low as ∼6.06–9.88 × 10{sup 9} MeV/g. This leads to a redistribution of the electric field and significant degradation in charge carrier collection.

• OSTI ID: 22493113
• Journal Information: Journal of Applied Physics, Vol. 118, Issue 24; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CHARGE CARRIERS
DAMAGE
ELECTRIC FIELDS
ELECTRON TRANSFER
ELECTRONS
EXPERIMENT RESULTS
GALLIUM ARSENIDES
GERMANIUM
INDIUM ARSENIDES
MEV RANGE
N-TYPE CONDUCTORS
PROTONS
P-TYPE CONDUCTORS
QUANTUM WELLS
RADIATION DOSES
SCANNING ELECTRON MICROSCOPY
SIMULATION
SOLAR CELLS