Ultrafast gating of a mid-infrared laser pulse by a sub-pC relativistic electron beam

Journal Article · Mon Dec 21 00:00:00 EST 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4937401· OSTI ID:22493066

Cesar, D. B.; Musumeci, P. ^[1]; Alesini, D. ^[2]

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1. Department of Physics and Astronomy, UCLA, Los Angeles, California 90095 (United States)
2. INFN-LNF, Via E. Fermi, 40, 00044 Frascati, Roma (Italy)

In this paper we discuss a relative time-of-arrival measurement scheme between an electron beam and a mid-infrared laser pulse based on the electron-beam controlled transmission in semiconductor materials. This technique can be used as a time-stamping diagnostic in ultrafast electron diffraction or microscopy. In particular, our characterization of Germanium demonstrates that sub-ps time-of-arrival sensitivity could be achieved in a single shot and with very low charge beams (<1 pC). Detailed measurements as a function of the beam charge and the laser wavelength offer insights on the free carrier dynamics in the semiconductor upon excitation by the electron beam.

• OSTI ID: 22493066
• Journal Information: Journal of Applied Physics, Vol. 118, Issue 23; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
BEAM TRANSPORT
CARRIERS
ELECTRON BEAMS
ELECTRON DIFFRACTION
EXCITATION
GERMANIUM
INFRARED RADIATION
LASER RADIATION
MICROSCOPY
PULSES
RELATIVISTIC RANGE
SEMICONDUCTOR MATERIALS
WAVELENGTHS