Broadband ultra-high transmission of terahertz radiation through monolayer MoS{sub 2}
- Nanoscale Science and Technology Laboratory, Institute for Advanced Study, Nanchang University, Nanchang 330031 (China)
- Department of Physics, Nanchang University, Nanchang 330031 (China)
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China)
In this study, the terahertz (THz) absorption and transmission of monolayer MoS{sub 2} with different carrier concentrations were investigated theoretically. The calculation shows that the THz absorption of monolayer MoS{sub 2} is very low even under high carrier concentrations and large incident angles. The sum of reflection and absorption losses of monolayer MoS{sub 2} is lower than that of graphene by one to three orders of magnitude. The transmission of monolayer MoS{sub 2} is higher than that of two-dimensional electron gases in traditional GaAs and InAs. The field-effect tube structure formed by monolayer MoS{sub 2}-insulation-layer-graphene is also studied. The THz absorption of graphene can reach saturation under low voltage by tuning the voltage between MoS{sub 2} and graphene layers in the structure. The maximum THz absorption of monolayer MoS{sub 2} is approximately 5%. Thus, monolayer MoS{sub 2} is a promising candidate for THz transparent electrodes.
- OSTI ID:
- 22493027
- Journal Information:
- Journal of Applied Physics, Vol. 118, Issue 22; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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