Quantitative analysis of doped/undoped ZnO nanomaterials using laser assisted atom probe tomography: Influence of the analysis parameters
- Groupe de Physique des Matériaux, UMR CNRS 6634, Université et INSA de Rouen, Avenue de l'Université, BP 12, 76801 Saint Etienne du Rouvray (France)
- Groupe d'étude de la Matière Condensée (GEMAC), CNRS Université de Versailles St Quentin, 45 Avenue des Etats-Unis, 78035 Versailles Cedex (France)
- Centre de Recherche sur les Ions, les Matériaux et la Photonique (CIMAP), UMR 6252 CEA-CNRS-ENSICAEN, Université de Caen, 14050 Caen (France)
In the last decade, atom probe tomography has become a powerful tool to investigate semiconductor and insulator nanomaterials in microelectronics, spintronics, and optoelectronics. In this paper, we report an investigation of zinc oxide nanostructures using atom probe tomography. We observed that the chemical composition of zinc oxide is strongly dependent on the analysis parameters used for atom probe experiments. It was observed that at high laser pulse energies, the electric field at the specimen surface is strongly dependent on the crystallographic directions. This dependence leads to an inhomogeneous field evaporation of the surface atoms, resulting in unreliable measurements. We show that the laser pulse energy has to be well tuned to obtain reliable quantitative chemical composition measurements of undoped and doped ZnO nanomaterials.
- OSTI ID:
- 22493013
- Journal Information:
- Journal of Applied Physics, Vol. 118, Issue 21; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GENERAL PHYSICS
ATOMS
CHEMICAL COMPOSITION
CRYSTALLOGRAPHY
DOPED MATERIALS
ELECTRIC FIELDS
ELECTRICAL INSULATORS
INHOMOGENEOUS FIELDS
LASERS
MICROELECTRONICS
NANOMATERIALS
NANOSTRUCTURES
OPTOELECTRONIC DEVICES
PROBES
PULSES
SEMICONDUCTOR MATERIALS
TOMOGRAPHY
ZINC OXIDES