Terahertz signal detection in a short gate length field-effect transistor with a two-dimensional electron gas

Journal Article · Sat Nov 28 00:00:00 EST 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4936264· OSTI ID:22492975

Shashkin, V. I. ^[1]

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1. Institute for Physics of Microstructures of the Russian Academy of Sciences, 603950 Nizhny Novgorod, Russia and N. I. Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation)

We consider the problem of non-resonant detection of terahertz signals in a short gate length field-effect transistor having a two-dimensional electron channel with zero external bias between the source and the drain. The channel resistance, gate-channel capacitance, and quadratic nonlinearity parameter of the transistor during detection as a function of the gate bias voltage are studied. Characteristics of detection of the transistor connected in an antenna with real impedance are analyzed. The consideration is based on both a simple one-dimensional model of the transistor and allowance for the two-dimensional distribution of the electric field in the transistor structure. The results given by the different models are discussed.

• OSTI ID: 22492975
• Journal Information: Journal of Applied Physics, Vol. 118, Issue 20; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANTENNAS
DETECTION
DISTRIBUTION
ELECTRIC FIELDS
ELECTRIC POTENTIAL
ELECTRON GAS
FIELD EFFECT TRANSISTORS
IMPEDANCE
NONLINEAR PROBLEMS
ONE-DIMENSIONAL CALCULATIONS
TWO-DIMENSIONAL CALCULATIONS
TWO-DIMENSIONAL SYSTEMS