skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Perpendicular coercivity enhancement of CoPt/TiN films by nitrogen incorporation during deposition

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4936365· OSTI ID:22492965
; ; ; ; ;  [1];  [2]; ;  [3]
  1. Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2-12-1, Ookayama, Meguro-ku, Tokyo 152-8552 (Japan)
  2. National Institute for Materials Science (NIMS), Sengen 1-2-1, Tsukuba, Ibaraki 305-0047 (Japan)
  3. Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, H-1121 Budapest, Konkoly-Thege ut 29-33 (Hungary)

The effect of N incorporation on the structure and magnetic properties of CoPt thin films deposited on glass substrates with TiN seed layers has been investigated. During the deposition of CoPt, introducing 20% N{sub 2} into Ar atmosphere promotes the (001) texture and enhances the perpendicular coercivity of CoPt film compared with the film deposited in pure Ar and post-annealed under the same conditions. From the in situ x-ray diffraction results, it is confirmed that N incorporation expands the lattice parameter of CoPt, which favors the epitaxial growth of CoPt on TiN. During the post-annealing process, N releases from CoPt film and promotes the L1{sub 0} ordering transformation of CoPt.

OSTI ID:
22492965
Journal Information:
Journal of Applied Physics, Vol. 118, Issue 20; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English