Perpendicular coercivity enhancement of CoPt/TiN films by nitrogen incorporation during deposition
Journal Article
·
· Journal of Applied Physics
- Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2-12-1, Ookayama, Meguro-ku, Tokyo 152-8552 (Japan)
- National Institute for Materials Science (NIMS), Sengen 1-2-1, Tsukuba, Ibaraki 305-0047 (Japan)
- Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, H-1121 Budapest, Konkoly-Thege ut 29-33 (Hungary)
The effect of N incorporation on the structure and magnetic properties of CoPt thin films deposited on glass substrates with TiN seed layers has been investigated. During the deposition of CoPt, introducing 20% N{sub 2} into Ar atmosphere promotes the (001) texture and enhances the perpendicular coercivity of CoPt film compared with the film deposited in pure Ar and post-annealed under the same conditions. From the in situ x-ray diffraction results, it is confirmed that N incorporation expands the lattice parameter of CoPt, which favors the epitaxial growth of CoPt on TiN. During the post-annealing process, N releases from CoPt film and promotes the L1{sub 0} ordering transformation of CoPt.
- OSTI ID:
- 22492965
- Journal Information:
- Journal of Applied Physics, Vol. 118, Issue 20; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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