Excitons in coupled type-II double quantum wells under electric and magnetic fields: InAs/AlSb/GaSb
Journal Article
·
· Journal of Applied Physics
- Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
We calculate the wave functions and the energy levels of an exciton in double quantum wells under electric (F) and magnetic (B) fields along the growth axis. The result is employed to study the energy levels, the binding energy, and the boundary on the F–B plane of the phase between the indirect exciton ground state and the semiconductor ground state for several typical structures of the type-II quasi-two-dimensional quantum wells such as InAs/AlSb/GaSb. The inter-well inter-band radiative transition rates are calculated for exciton creation and recombination. We find that the rates are modulated over several orders of magnitude by the electric and magnetic fields.
- OSTI ID:
- 22492955
- Journal Information:
- Journal of Applied Physics, Vol. 118, Issue 19; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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