Detection of a MoSe{sub 2} secondary phase layer in CZTSe by spectroscopic ellipsometry

Journal Article · Sat Nov 14 00:00:00 EST 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4935258· OSTI ID:22492922

Demircioğlu, Özden; Riedel, Ingo; Gütay, Levent ^[1]; Mousel, Marina; Redinger, Alex; Rey, Germain; Weiss, Thomas; Siebentritt, Susanne ^[2]

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1. Laboratory for Chalcogenide Photovoltaics, Energy and Semiconductor Research Laboratory, University of Oldenburg, Oldenburg (Germany)
2. Laboratory for Photovoltaics, University of Luxembourg, Belvaux (Luxembourg)

We demonstrate the application of Spectroscopic Ellipsometry (SE) for identification of secondary phase MoSe{sub 2} in polycrystalline Cu{sub 2}ZnSnSe{sub 4} (CZTSe) samples. A MoSe{sub 2} reference sample was analyzed, and its optical constants (ε{sub 1} and ε{sub 2}) were extracted by SE analysis. This dataset was implemented into an optical model for analyzing SE data from a glass/Mo/CZTSe sample containing MoSe{sub 2} at the back side of the absorber. We present results on the n and k values of CZTSe and show the extraction of the thickness of the secondary phase MoSe{sub 2} layer. Raman spectroscopy and scanning electron microscopy were applied to confirm the SE results.

• OSTI ID: 22492922
• Journal Information: Journal of Applied Physics, Vol. 118, Issue 18; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
DATASETS
DETECTION
ELLIPSOMETRY
GLASS
LAYERS
MOLYBDENUM SELENIDES
OPTICAL MODELS
POLYCRYSTALS
RAMAN SPECTROSCOPY
SCANNING ELECTRON MICROSCOPY
THICKNESS