Electrodynamics and quantum capacity: The case of Bi{sub 2}Se{sub 3} topological insulator
- Instituto de Física, Universidade Federal de Mato Grosso, 78060-900 Cuiabá, MT (Brazil)
Layered Bi-chalcogenide topological insulators are among the most available energy conversion (thermoelectric) and storage (battery) materials. Motivated by this applied aspect of fundamental importance and the good agreement between theory and key experiments probing spectroscopy and dc transport, we undertake a detailed study of electrodynamic responses of bulk Bi{sub 2}Se{sub 3} topological insulator. In particular, we confirm that the interplay between spin-orbit and electron correlations underpins its bulk metallicity. We show the implications of our proposal for the multi-channel nature of galvanostatic, voltage-capacity profiles intrinsic to Li{sub x}Bi{sub 2}Se{sub 3} battery material. Supported by a microscopic description of quantum capacity, we predict that layered Bi-based topological insulators are promising candidates for future high-voltage solid-state batteries.
- OSTI ID:
- 22492920
- Journal Information:
- Journal of Applied Physics, Vol. 118, Issue 18; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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