Structural and electrical properties of In-implanted Ge
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, Australian Capital Territory 0200 (Australia)
- Nuclear Science and Technology Department, Brookhaven National Laboratory, Upton, New York 11973 (United States)
- Instituut voor Kern-en Stralingsfysica, KU Leuven, 3001 Leuven (Belgium)
- Australian Synchrotron, 800 Blackburn Road, Clayton, Victoria 3168 (Australia)
- Department of Applied Physics, School of Applied Sciences, RMIT University, Melbourne 3001 (Australia)
We report on the effects of dopant concentration on the structural and electrical properties of In-implanted Ge. For In concentrations of ≤ 0.2 at. %, extended x-ray absorption fine structure and x-ray absorption near-edge structure measurements demonstrate that all In atoms occupy a substitutional lattice site while metallic In precipitates are apparent in transmission electron micrographs for In concentrations ≥0.6 at. %. Evidence of the formation of In-vacancy complexes deduced from extended x-ray absorption fine structure measurements is complimented by density functional theory simulations. Hall effect measurements of the conductivity, carrier density, and carrier mobility are then correlated with the substitutional In fraction.
- OSTI ID:
- 22492877
- Journal Information:
- Journal of Applied Physics, Vol. 118, Issue 16; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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