Radiation defect dynamics in Si at room temperature studied by pulsed ion beams

Journal Article · Wed Oct 07 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4932209· OSTI ID:22492794

Wallace, J. B.; Myers, M. T. ^[1]; Charnvanichborikarn, S.; Bayu Aji, L. B.; Kucheyev, S. O. ^[2]; Shao, L. ^[3]

---

1. Lawrence Livermore National Laboratory, Livermore, California 94550, USA and Department of Nuclear Engineering, Texas A&M University, College Station, Texas 77843 (United States)
2. Lawrence Livermore National Laboratory, Livermore, California 94550 (United States)
3. Department of Nuclear Engineering, Texas A&M University, College Station, Texas 77843 (United States)

The evolution of radiation defects after the thermalization of collision cascades often plays the dominant role in the formation of stable radiation disorder in crystalline solids of interest to electronics and nuclear materials applications. Here, we explore a pulsed-ion-beam method to study defect interaction dynamics in Si crystals bombarded at room temperature with 500 keV Ne, Ar, Kr, and Xe ions. The effective time constant of defect interaction is measured directly by studying the dependence of lattice disorder, monitored by ion channeling, on the passive part of the beam duty cycle. The effective defect diffusion length is revealed by the dependence of damage on the active part of the beam duty cycle. Results show that the defect relaxation behavior obeys a second order kinetic process for all the cases studied, with a time constant in the range of ∼4–13 ms and a diffusion length of ∼15–50 nm. Both radiation dynamics parameters (the time constant and diffusion length) are essentially independent of the maximum instantaneous dose rate, total ion dose, and dopant concentration within the ranges studied. However, both the time constant and diffusion length increase with increasing ion mass. This demonstrates that the density of collision cascades influences not only defect production and annealing efficiencies but also the defect interaction dynamics.

• OSTI ID: 22492794
• Journal Information: Journal of Applied Physics, Vol. 118, Issue 13; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ANNEALING
COLLISIONS
CRYSTALS
DAMAGE
DIFFUSION LENGTH
ION BEAMS
ION CHANNELING
PULSES
RADIATION DOSES
TEMPERATURE RANGE 0273-0400 K
THERMALIZATION
XENON IONS