Optical activity and defect/dopant evolution in ZnO implanted with Er
- Department of Physics, Centre for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048, Blindern, N-0316 Oslo (Norway)
- Royal Institute of Technology, KTH-ICT, Electrum 229, SE-164 40 Stockholm (Sweden)
The effects of annealing on the optical properties and defect/dopant evolution in wurtzite (0001) ZnO single crystals implanted with Er ions are studied using a combination of Rutherford backscattering/channeling spectrometry and photoluminescence measurements. The results suggest a lattice recovery behavior dependent on ion dose and involving formation/evolution of an anomalous multipeak defect distribution, thermal stability of optically active Er complexes, and Er outdiffusion. An intermediate defect band occurring between the surface and ion-induced defects in the bulk is stable up to 900 °C and has a photoluminescence signature around 420 nm well corresponding to Zn interstitials. The optical activity of the Er atoms reaches a maximum after annealing at 700 °C but is not directly associated to the ideal Zn site configuration, since the Er substitutional fraction is maximal already in the as-implanted state. In its turn, annealing at temperatures above 700 °C leads to dissociation of the optically active Er complexes with subsequent outdiffusion of Er accompanied by the efficient lattice recovery.
- OSTI ID:
- 22492755
- Journal Information:
- Journal of Applied Physics, Vol. 118, Issue 12; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ANNEALING
ATOMS
CHANNELING
DISTRIBUTION
DOSES
ERBIUM COMPLEXES
ERBIUM IONS
INTERSTITIALS
MONOCRYSTALS
OPTICAL ACTIVITY
PHOTOLUMINESCENCE
RUTHERFORD BACKSCATTERING SPECTROSCOPY
ZINC OXIDES