skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Influence of piezoelectric strain on the Raman spectra of BiFeO{sub 3} films deposited on PMN-PT substrates

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4940973· OSTI ID:22492703
; ;  [1];  [2];  [2]
  1. TU Bergakademie Freiberg, Institute of Theoretical Physics, 09596 Freiberg (Germany)
  2. Institute of Physics, Martin-Luther-University Halle-Wittenberg, 06099 Halle (Germany)

BiFeO{sub 3} epitaxial thin films were deposited on piezoelectric 0.72Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-0.28PbTiO{sub 3} (PMN-PT) substrates with a conductive buffer layer (La{sub 0.7}Sr{sub 0.3}MnO{sub 3} or SrRuO{sub 3}) using pulsed laser deposition. The calibration of the strain values induced by the electric field applied on the piezoelectric PMN-PT substrates was realised using X-Ray diffraction measurements. The method of piezoelectrically induced strain allows one to directly obtain a quantitative correlation between the strain and the shift of the Raman-active phonons. This is a prerequisite for making Raman scattering a strong tool to probe the strain coupling in multiferroic nanostructures. Using the Poisson's number for BiFeO{sub 3}, one can determine the volume change induced by strain, and therefore the Grüneisen parameters for specific phonon modes.

OSTI ID:
22492703
Journal Information:
Applied Physics Letters, Vol. 108, Issue 4; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English

Cited By (1)

Ferroelastic domain identification in BiFeO3 crystals using Raman spectroscopy journal January 2019