Transport properties of AB stacked (Bernal) bilayer graphene on and without substrate within 2- and 4-band approximations

Journal Article · Tue Oct 27 00:00:00 EDT 2015 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4932760· OSTI ID:22492531

Gusynin, V. P., E-mail: [e-mail]; Sharapov, S. G., E-mail: [e-mail] ^[1]; Reshetnyak, A. A., E-mail: [e-mail] ^[2]

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1. Bogolyubov Institute for Theoretical Physics, Kiev, 03680 Ukraine (Ukraine)
2. Institute of Strength Physics and Materials Science SB RAS, Tomsk, 634055 (Russian Federation)

We present the results of the calculations of longitudinal and Hall conductivities of AB-stacked bilayer graphene as a function of frequency, finite chemical potential, temperature both with and without magnetic fields on a base of 2- and 4-band effective models. The limited cases of the conductivities for direct current are derived. The relations being important for optoelectronic among Hall conductivities and Faraday, Kerr angles in the AB-bilayers samples in the electric and magnetic fields when the radiation passes across bilayer sheets on different kinds a substrate are obtained.

• OSTI ID: 22492531
• Journal Information: AIP Conference Proceedings, Vol. 1683, Issue 1; Conference: International conference on advanced materials with hierarchical structure for new technologies and reliable structures 2015, Tomsk (Russian Federation), 21-25 Sep 2015; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
APPROXIMATIONS
DIRECT CURRENT
ELECTRIC FIELDS
FREQUENCY DEPENDENCE
GRAPHENE
HALL EFFECT
LAYERS
MAGNETIC FIELDS
SUBSTRATES