Modulation of interlayer exchange coupling strength in magnetic tunnel junctions via strain effect

Journal Article · Tue Sep 15 00:00:00 EDT 2015 · AIP Advances

DOI:https://doi.org/10.1063/1.4932221· OSTI ID:22492384

Jiang, Xin; Li, Zhipeng; Zheng, Yuankai; Kaiser, Christian; Diao, Zhitao; Fang, Jason; Leng, Qunwen ^[1]

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1. Western Digital Corporation, 44100 Osgood Road, Fremont, California 94539 (United States)

Interlayer exchange coupling of two ferromagnetic electrodes separated by a thin MgO tunnel barrier is investigated using magneto-optical Kerr effect. We find that the coupling field can be reduced by more than 40% as the thickness of a top Ta capping layer increases from 0.5 to 1.2 nm. In contrast, a similar film stack with an additional 3 nm Ru capping layer displays no such dependence on Ta thickness. Transmission electron microscopy study shows that the oxidation of the exposed Ta capping layer induces changes in the crystalline structures of the underlying films, giving rise to the observed reduction of the interlayer coupling field.

• OSTI ID: 22492384
• Journal Information: AIP Advances, Vol. 5, Issue 9; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
COUPLING
CRYSTAL STRUCTURE
DIFFUSION BARRIERS
ELECTRODES
FERROMAGNETIC MATERIALS
FERROMAGNETISM
FILMS
KERR EFFECT
LAYERS
MAGNESIUM OXIDES
MAGNETO-OPTICAL EFFECTS
MODULATION
OXIDATION
REDUCTION
RUTHENIUM
STRAINS
TANTALUM
TRANSMISSION ELECTRON MICROSCOPY
TUNNEL EFFECT