Internal quantum efficiency enhancement of GaInN/GaN quantum-well structures using Ag nanoparticles

Journal Article · Tue Sep 15 00:00:00 EDT 2015 · AIP Advances

DOI:https://doi.org/10.1063/1.4931948· OSTI ID:22492367

Iida, Daisuke ^[1]; Fadil, Ahmed; Ou, Yiyu; Kopylov, Oleksii; Ou, Haiyan ^[2]; Chen, Yuntian ^[2]; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi ^[3]; Akasaki, Isamu ^[3]

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1. Department of Applied Physics, Tokyo University of Science, Katsushika, 125-8585 Tokyo (Japan)
2. Department of Photonics Engineering, Technical University of Denmark, 2800 Lyngby (Denmark)
3. Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi Tempaku, 468-8502 Nagoya (Japan)

We report internal quantum efficiency enhancement of thin p-GaN green quantum-well structure using self-assembled Ag nanoparticles. Temperature dependent photoluminescence measurements are conducted to determine the internal quantum efficiency. The impact of excitation power density on the enhancement factor is investigated. We obtain an internal quantum efficiency enhancement by a factor of 2.3 at 756 W/cm{sup 2}, and a factor of 8.1 at 1 W/cm{sup 2}. A Purcell enhancement up to a factor of 26 is estimated by fitting the experimental results to a theoretical model for the efficiency enhancement factor.

• OSTI ID: 22492367
• Journal Information: AIP Advances, Vol. 5, Issue 9; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
EXCITATION
GALLIUM NITRIDES
GOLD
NANOPARTICLES
PHOTOLUMINESCENCE
POWER DENSITY
P-TYPE CONDUCTORS
QUANTUM EFFICIENCY
QUANTUM WELLS
TEMPERATURE DEPENDENCE