Investigation to the deep center related properties of low temperature grown InPBi with Hall and photoluminescence

Journal Article · Tue Dec 15 00:00:00 EST 2015 · AIP Advances

DOI:https://doi.org/10.1063/1.4937412· OSTI ID:22492215

Wang, Peng; Pan, Wenwu; Wu, Xiaoyan ^[1]; Wang, Kai ^[1]; Yue, Li; Gong, Qian ^[1]; Wang, Shumin ^[1]

---

1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science, Shanghai 200050 (China)

InP{sub 1-x}Bi{sub x} epilayers with bismuth (Bi) concentration x= 1.0% were grown on InP by gas source molecular beam epitaxy (GS-MBE) at low temperature (LT). Bi incorporation decreased the intrinsic free electron concentration of low temperature grown InP indicated by hall analysis. It is concluded that deep level center was introduced by Bi. Influence of Si doping on the InP{sub 1-x}Bi{sub x} films Photoluminescence (PL) was investigated. N-type doping in the InP{sub 1-x}Bi{sub x} epilayers was found to be effective at PL enhancement. Blue shift of InPBi PL emission wavelength was observed as the Si doping concentration increasing. Two independent peaks were fitted and their temperature dependence behavior was observed to be distinct obviously. Two individual radiative recombination processes were expected to be involved.

• OSTI ID: 22492215
• Journal Information: AIP Advances, Vol. 5, Issue 12; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABUNDANCE
BISMUTH COMPOUNDS
BISMUTH PHOSPHATES
CONCENTRATION RATIO
ELECTRONS
FILMS
HALL EFFECT
INDIUM PHOSPHIDES
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
RECOMBINATION
SILICON
TEMPERATURE DEPENDENCE