An amorphous phase formation at palladium / silicon oxide (Pd/SiO{sub x}) interface through electron irradiation - electronic excitation process

Journal Article · Sun Nov 15 00:00:00 EST 2015 · AIP Advances

DOI:https://doi.org/10.1063/1.4936629· OSTI ID:22492190

Nagase, Takeshi ^[1]; Yamashita, Ryo; Yabuuchi, Atsushi ^[2]; Lee, Jung-Goo ^[3]

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1. Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, 7-1, Mihogaoka, Ibaraki, Osaka 567-0047 (Japan)
2. Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1, Yamada-Oka, Suita, Osaka 565-0871 (Japan)
3. Powder & Ceramics Division, Korea Institute of Materials Science, 66 Sangnam-dong, Changwon, Kyungsangnam-Do 641-101 (Korea, Republic of)

A Pd-Si amorphous phase was formed at a palladium/silicon oxide (Pd/SiO{sub x}) interface at room temperature by electron irradiation at acceleration voltages ranging between 25 kV and 200 kV. Solid-state amorphization was stimulated without the electron knock-on effects. The total dose required for the solid-state amorphization decreases with decreasing acceleration voltage. This is the first report on electron irradiation induced metallic amorphous formation caused by the electronic excitation at metal/silicon oxide interface.

• OSTI ID: 22492190
• Journal Information: AIP Advances, Vol. 5, Issue 11; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMORPHOUS STATE
ELECTRIC POTENTIAL
ELECTRONS
EXCITATION
INTERFACES
IRRADIATION
PALLADIUM
SILICON
SILICON OXIDES
SOLIDS
TEMPERATURE RANGE 0273-0400 K