Pulsed-N{sub 2} assisted growth of 5-20 nm thick β-W films
Abstract
A technique to deposit 5-20 nm thick β-phase W using a 2-second periodic pulse of 1 sccm-N{sub 2} gas on Si(001) and SiN(5 nm)/Si(001) substrates is reported. Resistivity, X-ray photoelectron spectroscopy and X-ray reflectivity were utilized to determine phase, bonding and thickness, respectively. X-ray diffraction patterns were utilized to determine the crystal structure, lattice constant and crystal size using the LeBail method. The flow rate of Nitrogen gas (continuous vs. pulsing) had significant impact upon the crystallinity and formation of β-phase W.
- Authors:
-
- College of Nanoscale Science and Engineering, University at Albany, SUNY, Albany, New York 12203 (United States)
- Publication Date:
- OSTI Identifier:
- 22492171
- Resource Type:
- Journal Article
- Journal Name:
- AIP Advances
- Additional Journal Information:
- Journal Volume: 5; Journal Issue: 11; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 2158-3226
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; CRYSTAL GROWTH; CRYSTAL STRUCTURE; CRYSTALS; ELECTRIC CONDUCTIVITY; FLOW RATE; LATTICE PARAMETERS; NITROGEN; REFLECTIVITY; SILICON; SILICON NITRIDES; SUBSTRATES; THIN FILMS; TUNGSTEN; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY
Citation Formats
Narasimham, Avyaya J., Green, Avery, Matyi, Richard J., Khare, Prasanna, Vo, Tuan, Diebold, Alain, and LaBella, Vincent P., E-mail: vlabella@albany.edu. Pulsed-N{sub 2} assisted growth of 5-20 nm thick β-W films. United States: N. p., 2015.
Web. doi:10.1063/1.4935372.
Narasimham, Avyaya J., Green, Avery, Matyi, Richard J., Khare, Prasanna, Vo, Tuan, Diebold, Alain, & LaBella, Vincent P., E-mail: vlabella@albany.edu. Pulsed-N{sub 2} assisted growth of 5-20 nm thick β-W films. United States. https://doi.org/10.1063/1.4935372
Narasimham, Avyaya J., Green, Avery, Matyi, Richard J., Khare, Prasanna, Vo, Tuan, Diebold, Alain, and LaBella, Vincent P., E-mail: vlabella@albany.edu. 2015.
"Pulsed-N{sub 2} assisted growth of 5-20 nm thick β-W films". United States. https://doi.org/10.1063/1.4935372.
@article{osti_22492171,
title = {Pulsed-N{sub 2} assisted growth of 5-20 nm thick β-W films},
author = {Narasimham, Avyaya J. and Green, Avery and Matyi, Richard J. and Khare, Prasanna and Vo, Tuan and Diebold, Alain and LaBella, Vincent P., E-mail: vlabella@albany.edu},
abstractNote = {A technique to deposit 5-20 nm thick β-phase W using a 2-second periodic pulse of 1 sccm-N{sub 2} gas on Si(001) and SiN(5 nm)/Si(001) substrates is reported. Resistivity, X-ray photoelectron spectroscopy and X-ray reflectivity were utilized to determine phase, bonding and thickness, respectively. X-ray diffraction patterns were utilized to determine the crystal structure, lattice constant and crystal size using the LeBail method. The flow rate of Nitrogen gas (continuous vs. pulsing) had significant impact upon the crystallinity and formation of β-phase W.},
doi = {10.1063/1.4935372},
url = {https://www.osti.gov/biblio/22492171},
journal = {AIP Advances},
issn = {2158-3226},
number = 11,
volume = 5,
place = {United States},
year = {Sun Nov 15 00:00:00 EST 2015},
month = {Sun Nov 15 00:00:00 EST 2015}
}
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