Bilayer avalanche spin-diode logic
- Institut d’Electronique Fondamentale, Univ. Paris-Sud, CNRS, 91405 Orsay (France)
- Department of Materials Science, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States)
- Department of Electrical Engineering & Computer Science, Northwestern University, Evanston, IL 60208 (United States)
A novel spintronic computing paradigm is proposed and analyzed in which InSb p-n bilayer avalanche spin-diodes are cascaded to efficiently perform complex logic operations. This spin-diode logic family uses control wires to generate magnetic fields that modulate the resistance of the spin-diodes, and currents through these devices control the resistance of cascaded devices. Electromagnetic simulations are performed to demonstrate the cascading mechanism, and guidelines are provided for the development of this innovative computing technology. This cascading scheme permits compact logic circuits with switching speeds determined by electromagnetic wave propagation rather than electron motion, enabling high-performance spintronic computing.
- OSTI ID:
- 22492167
- Journal Information:
- AIP Advances, Vol. 5, Issue 11; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
- Country of Publication:
- United States
- Language:
- English
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