Impact of thermal treatment on the optical performance of InGaN/GaN light emitting diodes

Journal Article · Thu Oct 15 00:00:00 EDT 2015 · AIP Advances

DOI:https://doi.org/10.1063/1.4934491· OSTI ID:22492132

Meneghini, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico ^[1]; Zhu, Dandan; Humphreys, Colin J. ^[2]; Berti, Marina; Gasparotto, Andrea; Cesca, Tiziana ^[3]; Vinattieri, Anna ^[4]; Bogani, Franco ^[5]

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1. University of Padova, Department of Information Engineering, via Gradenigo 6/B, 35131 Padova (Italy)
2. University of Cambridge, Dept. Materials Science & Metallurgy, Cambridge, CB2 3QZ (United Kingdom)
3. University of Padova, Department of Physics, and Astronomy via Marzolo 8 35131 Padova (Italy)
4. University of Florence, Department of Physics, Via Sansone, 1 - 50019 Sesto Fiorentino (Italy)
5. University of Florence, Department of Engineering, Via di Santa Marta, 3, 50139 Firenze (Italy)

This paper describes a detailed analysis of the effects of high temperatures on the optical performance and structural characteristics of GaN-based LED structures with a high threading dislocation density. Results show that, as a consequence of storage at 900 °C in N{sub 2} atmosphere, the samples exhibit: (i) an increase in the efficiency of GaN and quantum-well luminescence, well correlated to an increase in carrier lifetime; (ii) a decrease in the parasitic luminescence peaks related to Mg acceptors, which is correlated to the reduction in the concentration of Mg in the p-type region, detected by Secondary Ion Mass Spectroscopy (SIMS); (iii) a diffusion of acceptor (Mg) atoms to the quantum well region; (iv) a reduction in the yield of Rutherford Backscattering Spectrometry (RBS)-channeling measurements, possibly due to a partial re-arrangement of the dislocations, which is supposed to be correlated to the increase in radiative efficiency (see (i))

• OSTI ID: 22492132
• Journal Information: AIP Advances, Vol. 5, Issue 10; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
36 MATERIALS SCIENCE
CARRIER LIFETIME
CHANNELING
CONCENTRATION RATIO
DIFFUSION
DISLOCATIONS
GALLIUM NITRIDES
HEAT TREATMENTS
ION MICROPROBE ANALYSIS
LIGHT EMITTING DIODES
LUMINESCENCE
MASS SPECTROSCOPY
P-TYPE CONDUCTORS
QUANTUM WELLS
REDUCTION
RUTHERFORD BACKSCATTERING SPECTROSCOPY
TEMPERATURE DEPENDENCE