Dynamic characteristics of two-state lasing quantum dot lasers under large signal modulation

Journal Article · Thu Oct 15 00:00:00 EDT 2015 · AIP Advances

DOI:https://doi.org/10.1063/1.4933194· OSTI ID:22492128

Lv, Zun-Ren; Ji, Hai-Ming; Luo, Shuai; Gao, Feng; Xu, Feng; Yang, Tao ^[1]; Xiao, De-Hang ^[2]

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1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
2. College of Physical Science and Technology, Heilongjiang University, Harbin 150080 (China)

Large signal modulation characteristics of the simultaneous ground-state (GS) and excited-state (ES) lasing quantum dot lasers are theoretically investigated. Relaxation oscillations of ‘0 → 1’ and ‘1 → 0’ in the GS lasing region (Region I), the transition region from GS lasing to two-state lasing (Region II) and the two-state lasing region (Region III) are compared and analyzed. It is found that the overshooting power and settling time in both Regions I and III decrease as the bias current increases. However, there exist abnormal behaviors of the overshooting power and settling time in Region II owing to the occurrence of ES lasing, which lead to fuzzy eye diagrams of the GS and ES lasing. Moreover, the ES lasing in Region III possesses much better eye diagrams because of its shorter settling time and smaller overshooting power over the GS lasing in Region I.

• OSTI ID: 22492128
• Journal Information: AIP Advances, Vol. 5, Issue 10; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
36 MATERIALS SCIENCE
COMPARATIVE EVALUATIONS
DIAGRAMS
EXCITED STATES
GROUND STATES
LASER RADIATION
MODULATION
OSCILLATIONS
QUANTUM DOTS
RELAXATION
SEMICONDUCTOR LASERS