Modulation of hole-injection in GaInN-light emitting triodes and its effect on carrier recombination behavior
- Department of Physics, Inha University, Incheon 402-751 (Korea, Republic of)
The effects of the hole injection modulated by using a three-terminal GaInN-based light emitter, light-emitting triode (LET), on carrier recombination behavior and efficiency droop are investigated. It was found that the lateral electric field created by applying voltage bias between the two anodes effectively reduces efficiency droop as well as dynamic conductance of LETs. Detailed analyses of LETs under various operation conditions by APSYS simulations reveal that the asymmetry in carrier transport between electrons and holes is alleviated by promoted injection of hot holes over the potential barrier, increasing the hole concentration as well as the radiative recombination rate in the multiple quantum well active region.
- OSTI ID:
- 22492119
- Journal Information:
- AIP Advances, Vol. 5, Issue 10; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
- Country of Publication:
- United States
- Language:
- English
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