Electro-physical characterization of individual and arrays of ZnO nanowires
- Department of Electrical Engineering, University of North Texas, 1155 Union Circle, Denton, Texas 76203 (United States)
- Department of Physics, University of North Texas, 1155 Union Circle, Denton, Texas 76203 (United States)
- Centre for Advanced Nanotechnology, University of Toronto, Toronto M5S 3E3 (Canada)
Capacitance measurements were made on an array of parallel ZnO nanowires embedded in a polymer matrix and provided with two electrodes perpendicular to the nanowires. The capacitance monotonically increased, and saturated at large negative (depleting) and large positive (accumulating) voltages. A qualitative explanation for this behavior is presented, taking into account specific features of quasi-one-dimensional screening. The increasing or decreasing character of the capacitance-voltage characteristics were determined by the conductivity type of the nanowires, which in our case was n-type. A dispersion of the experimental capacitance was observed over the entire frequency range of 1 kHz to 5 MHz. This phenomenon is explained by the slow discharge of the nanowires through the thin dielectric layer that separates them from the top electrode. Separate measurements on individual identical nanowires in a field effect transistor configuration yielded an electron concentration and mobility of approximately 10{sup 17 }cm{sup −3} and 150 cm{sup 2}/Vs, respectively, at room temperature.
- OSTI ID:
- 22490795
- Journal Information:
- Journal of Applied Physics, Vol. 118, Issue 3; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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