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Title: Nonlinear absorption coefficient of pulsed laser deposited MgZnO thin film

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.4918128· OSTI ID:22490538
; ; ;  [1];  [2]
  1. Laser Bhawan, School of Physics, Devi Ahilya University, Khandwa Road, Indore-452001 (India)
  2. UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452001 (India)

We report the imaginary part of 3{sup rd} order nonlinear susceptibility and the nonlinear absorption coefficient of Mg doped ZnO thin film using standard Z-scan technique. The origin of nonlinear absorption is attributed to the two photon absorption followed by the free carrier absorption because of the presence of oxygen vacancy defects. We have also confirmed the experimental results with the theoretical results obtained by considering the steady state response of a two level atom with the monochromatic field models.

OSTI ID:
22490538
Journal Information:
AIP Conference Proceedings, Vol. 1665, Issue 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English