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Title: Temperature dependent barrier height and ideality factor of electrodeposited n-CdSe/Cu Schottky barrier diode

Abstract

This article reports the measurement of temperature-dependent barrier height and ideality factor of n-CdSe/Cu Schottky barrier diode. The Cadmium Selenide (CdSe) thin films have been deposited by simple electrodeposition technique. The XRD measurements ravels the deposited single phase CdSe films are highly oriented on (002) plane and the average particle size has been calculated to be ~18 nm. From SEM characterization, it is clear that the surface of CdSe thin films are continuous, homogeneous and the film is well adhered to the substrate and consists of fine grains which are irregular in shape and size. Current-Voltage characteristics have been measured at different temperatures in the range (298 K – 353 K). The barrier height and ideality factor are found to be strongly temperature dependent. The inhomogenious barrier height increases and ideality factor decreases with increase in temperature. The expectation value has been calculated and its value is 0.30 eV.

Authors:
;  [1]
  1. Department of Applied Physics, Indian School of Mines, Dhanbad - 826004, Jharkhand (India)
Publication Date:
OSTI Identifier:
22490533
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1665; Journal Issue: 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CADMIUM SELENIDES; COPPER; ELECTRIC CONDUCTIVITY; ELECTRODEPOSITION; EV RANGE; EXPECTATION VALUE; N-TYPE CONDUCTORS; PARTICLE SIZE; SCANNING ELECTRON MICROSCOPY; SCHOTTKY BARRIER DIODES; SUBSTRATES; SURFACES; TEMPERATURE DEPENDENCE; THIN FILMS; X-RAY DIFFRACTION

Citation Formats

Mahato, S., E-mail: som.phy.ism@gmail.com, Shiwakoti, N., and Kar, A. K. Temperature dependent barrier height and ideality factor of electrodeposited n-CdSe/Cu Schottky barrier diode. United States: N. p., 2015. Web. doi:10.1063/1.4918118.
Mahato, S., E-mail: som.phy.ism@gmail.com, Shiwakoti, N., & Kar, A. K. Temperature dependent barrier height and ideality factor of electrodeposited n-CdSe/Cu Schottky barrier diode. United States. https://doi.org/10.1063/1.4918118
Mahato, S., E-mail: som.phy.ism@gmail.com, Shiwakoti, N., and Kar, A. K. 2015. "Temperature dependent barrier height and ideality factor of electrodeposited n-CdSe/Cu Schottky barrier diode". United States. https://doi.org/10.1063/1.4918118.
@article{osti_22490533,
title = {Temperature dependent barrier height and ideality factor of electrodeposited n-CdSe/Cu Schottky barrier diode},
author = {Mahato, S., E-mail: som.phy.ism@gmail.com and Shiwakoti, N. and Kar, A. K.},
abstractNote = {This article reports the measurement of temperature-dependent barrier height and ideality factor of n-CdSe/Cu Schottky barrier diode. The Cadmium Selenide (CdSe) thin films have been deposited by simple electrodeposition technique. The XRD measurements ravels the deposited single phase CdSe films are highly oriented on (002) plane and the average particle size has been calculated to be ~18 nm. From SEM characterization, it is clear that the surface of CdSe thin films are continuous, homogeneous and the film is well adhered to the substrate and consists of fine grains which are irregular in shape and size. Current-Voltage characteristics have been measured at different temperatures in the range (298 K – 353 K). The barrier height and ideality factor are found to be strongly temperature dependent. The inhomogenious barrier height increases and ideality factor decreases with increase in temperature. The expectation value has been calculated and its value is 0.30 eV.},
doi = {10.1063/1.4918118},
url = {https://www.osti.gov/biblio/22490533}, journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1665,
place = {United States},
year = {Wed Jun 24 00:00:00 EDT 2015},
month = {Wed Jun 24 00:00:00 EDT 2015}
}