Effect of substrate temperature on structural and electrical properties of RF sputtered hafnium oxide thin films

Journal Article · Wed Jun 24 00:00:00 EDT 2015 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4917978· OSTI ID:22490431

Das, K. C.; Ghosh, S. P.; Tripathy, N.; Bose, G. ^[1]; Lee, T. ^[2]; Myoung, J. M. ^[3]

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1. ITER, SOA University, Bhubaneswar-751030 (India)
2. Department of Bio-Nanotechnology, Gachon University, Gyeonggi-do, Republic of Korea, 461701 (Korea, Republic of)
3. Department of Materials Science and Engineering, Yonsei University, Seoul, Republic of Korea, 120749 (Korea, Republic of)

In this work hafnium oxide thin films were deposited on p-type silicon substrate by Radio frequency magnetron sputtering at different substrate temperature ranging from room temperature to 300 °C. The structural and electrical properties of the sputtered films were investigated by x-ray diffraction, capacitance-voltage and current-voltage measurements. The XRD results show the formation monoclinic structure of the hafnium oxide thin films. The shifting of C-V curves towards negative voltage side depicts the increase in positive oxide charges with the rise of substrate temperature. Leakage current was found increased, when temperature enhanced from room temperature to 300 °C.

• OSTI ID: 22490431
• Journal Information: AIP Conference Proceedings, Vol. 1665, Issue 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CAPACITANCE
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
HAFNIUM OXIDES
LEAKAGE CURRENT
MONOCLINIC LATTICES
P-TYPE CONDUCTORS
RADIOWAVE RADIATION
SILICON
SPUTTERING
SUBSTRATES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
X-RAY DIFFRACTION