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Title: Electronic and multiferroic properties of Zn{sub 0.85}Mg{sub 0.15}O thin film

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.4917969· OSTI ID:22490426
;  [1]; ; ; ;  [2]
  1. Department of Physics and Materials Science & Engineering, Jaypee Institute of Information Technology, Noida-201307 (India)
  2. UGC-DAE Consortium for Scientific Research, Khandwa Road, Indore-452001 (India)

Thin film sample of Zn{sub 0.85}Mg{sub 0.15}O was prepared on Si (100) substrate by pulsed laser deposition and its structural, electronic, magnetic and ferroelectric properties were investigated. The Zn{sub 0.85}Mg{sub 0.15}O thin film sample is found to show room temperature multiferroic properties; suitable for device fabrication.

OSTI ID:
22490426
Journal Information:
AIP Conference Proceedings, Vol. 1665, Issue 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English