Silicon quantum dots in SiO{sub x} dielectrics as energy selective contacts in hot carrier solar cells

Journal Article · Wed Jun 24 00:00:00 EDT 2015 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4917926· OSTI ID:22490400

Kar, Debjit; Das, Debajyoti ^[1]

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1. Nano-Science Group, Energy Research Unit, Indian Association for the Cultivation of Science, Jadavpur, Kolkata – 700032 (India)

Thin films of c-Si QDs embedded in a-SiO{sub x} dielectric matrix was achieved at a low temperature ∼400°C, from one step process by reactive rf magnetron co-sputtering of c-Si wafer and pure SiO{sub 2} targets, in the (H{sub 2}+Ar)- plasma. Formation of a double-barrier structure has been primarily identified from the SAX data and exclusively confirmed from the resonant tunneling current appearing in the J-E characteristic curve peaks, determined by the discrete energy levels of c-Si QDs, at which it could be used as energy selective contacts in hot carrier solar cells.

• OSTI ID: 22490400
• Journal Information: AIP Conference Proceedings, Vol. 1665, Issue 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
DIAGRAMS
DIELECTRIC MATERIALS
ELECTRIC CONDUCTIVITY
ENERGY LEVELS
MATRIX MATERIALS
QUANTUM DOTS
SILICA
SILICON
SILICON OXIDES
SMALL ANGLE SCATTERING
SOLAR CELLS
SPUTTERING
THIN FILMS
TUNNEL EFFECT
X-RAY DIFFRACTION