Epitaxial growth of In{sub x}Ga{sub 1-x}N alloy films on sapphire and silicon by reactive co-sputtering of GaAs and indium
- Department of Physics, Indian Institute of Technology Bombay, Mumbai – 400076 (India)
- Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Mumbai – 400076 (India)
In{sub x}Ga{sub 1-x}N alloy films (0.2<0.5) were epitaxially grown on c-cut sapphire and Si (100) substrates by reactive co-sputtering of GaAs and indium with 100% nitrogen at a substrate temperature of 600 °C. X-ray diffraction studies show the formation of completely c-axis oriented, single phase alloy films over the studied range of composition. The crystallite size along the growth direction and surface morphology of alloy films, particularly those with higher indium fraction exhibit substantial improvement on Si (100) substrate, compared to the c-cut sapphire substrate. The electrical resistivity decreases monotonously with increase in indium fraction and the alloy films on Si (100) show substantially higher mobility, compared to those on sapphire. These features are attributed to superior crystallinity of alloy films on Si (100), which possibly arise from the formation of interfacial hexagonal α-Si{sub 3}N{sub 4}, owing to the interaction of nitrogen plasma with Si surface.
- OSTI ID:
- 22490396
- Journal Information:
- AIP Conference Proceedings, Vol. 1665, Issue 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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