Au catalyst assisted growth of ZnO nanowires by vapour phase transport method on p-Si and fabrication of p-Si/n-ZnO heterojunction diode

Journal Article · Wed Jun 24 00:00:00 EDT 2015 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4917814· OSTI ID:22490332

Bhat, Shashidhara; V, Shrisha B.

In this work ZnO nanowires were grown on p type silicon (p-Si) substrate using Vapor-Liquid-Solid (VLS) approach using Au as catalyst by vapor phase transport growth method. Surface morphology and structural properties of the grown ZnO nanowires were examined by Scanning electron microscope (SEM) and X-ray diffraction (XRD), respectively. Using the n-ZnO nanowires (NW) grown on p-type silicon, n-ZnO NW/p-Si heterojunction diode was fabricated. The rectification property of the fabricated diode was studied by room temperature as well as high temperature (up to 370 K) current-voltage (I-V) measurements.

• OSTI ID: 22490332
• Journal Information: AIP Conference Proceedings, Vol. 1665, Issue 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CATALYSTS
ELECTRIC CONDUCTIVITY
FABRICATION
GOLD
HETEROJUNCTIONS
MORPHOLOGY
NANOWIRES
N-TYPE CONDUCTORS
P-TYPE CONDUCTORS
SCANNING ELECTRON MICROSCOPY
SILICON
SOLIDS
SUBSTRATES
TEMPERATURE DEPENDENCE
VAPORS
X-RAY DIFFRACTION
ZINC OXIDES