Stress induced growth of Sn nanowires in a single step by sputtering method

Journal Article · Wed Jun 24 00:00:00 EDT 2015 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4917739· OSTI ID:22490280

Kothari, D. C. ^[1]; Patel, N.; Miotello, A. ^[2]

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1. Department of Physics, University of Mumbai, Vidyanagari, Santacruz (E), Mumbai 400 098 (India)
2. Dipartimento di Fisica, Università degli Studi di Trento, I-38123 Povo (Trento) (Italy)

Sn nanowires in aluminum film have been synthesized in a single step by co-sputtering of Al and Sn targets. Due to immiscibility of Sn and Al, co-sputtering leads to generation of stress in the composite film. In order to attain thermodynamic equilibrium, Sn separates from Al and diffuses towards the grain boundaries. External perturbation due to ambient atmosphere leads to corrosion at the grain boundaries forming pits which provide path for Sn to evolve. Owing to this, extrusion of Sn nanowires from Al film occurs to release the residual stress in the film.

• OSTI ID: 22490280
• Journal Information: AIP Conference Proceedings, Vol. 1665, Issue 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM
ATMOSPHERES
CORROSION
EQUILIBRIUM
EXTRUSION
FILMS
GRAIN BOUNDARIES
NANOWIRES
RESIDUAL STRESSES
SILICON
SPUTTERING
TIN