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Title: Optical properties analysis of Ta-doped TiO{sub 2} thin films on LaAlO{sub 3} substrates

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.4930712· OSTI ID:22490172
;  [1]; ;  [1]
  1. Department of Physics, Institut Teknologi Bandung, Ganesa 10 Bandung 40132 (Indonesia)

We study optical properties of Ta-doped TiO{sub 2} thin film on LaAlO{sub 3} substrate using spectroscopy ellipsometry (SE) analysis at energy range of 0.5 – 6.5 eV. Room temperature SE data for Ψ (amplitude ratio) and Δ (phase difference) between p- and s- polarized light waves are taken with multiple incident angles at several spots on the samples. Here, absorption coefficient has been extracted from SE measurements at photon incident angle of 70° for different Ta concentration (0.01, 0.4, and 5 at. %). Multilayer modelling is performed which takes into account reflections at each interface through Fresnel coefficients to obtain reasonably well the fitting of Ψ and Δ data simultaneously. As the results, we estimate that film thickness increases by increasing Ta concentration accompanied by the formation of a new electronic structure. By increasing Ta impurities, the blueshift of absorption coefficient (α) peaks is observable. This result indicates that TiO{sub 2} thin film becomes optically resistive by introducing Ta doping. Schematic model of interband transition inTiO{sub 2}:Ta will be proposed base on obtained optical properties. This study enables us to predict the role of Ta doping on the electronic and optical band structures of TiO{sub 2} thin film.

OSTI ID:
22490172
Journal Information:
AIP Conference Proceedings, Vol. 1677, Issue 1; Conference: 5. international conference on mathematics and natural sciences, Bandung (Indonesia), 2-3 Nov 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English